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 M74HCU04
HEX INVERTER (SINGLE STATE)
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HIGH SPEED: tPD = 5ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25C HIGH NOISE IMMUNITY: VNIH = V NIL = 10% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04
DIP
SOP
TSSOP
ORDER CODES
PACKAGE DIP SOP TSSOP TUBE M74HCU04B1R M74HCU04M1R T&R M74HCU04RM13TR M74HCU04TTR
DESCRIPTION The M74HCU04 is an high speed CMOS HEX INVERTER (SINGLE STATE) fabricated with silicon gate C2MOS technology. As internal circuit is composed of a single stage inverter, it can be used in crystal oscillator.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2002
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M74HCU04
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYMBOL 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCTION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L H Y H L
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 25 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW C C
ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 C; derate to 300mW by 10mW/C from 65C to 85C
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V C ns ns ns
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M74HCU04
DC SPECIFICATIONS
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 IO=-20 A IO=-20 A IO=-20 A IO=-4.0 mA IO=-5.2 mA IO=20 A IO=20 A IO=20 A IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VCC or GND TA = 25C Min. 1.7 3.6 4.8 0.3 0.9 1.2 1.8 4.0 5.5 4.18 5.68 2.0 4.5 5.9 4.31 5.8 0.0 0.0 0.1 0.17 0.18 0.2 0.5 0.5 0.26 0.26 0.1 1 1.8 4.0 5.5 4.13 5.63 0.2 0.5 0.5 0.33 0.33 1 10 Typ. Max. Value -40 to 85C Min. 1.7 3.6 4.8 0.3 0.9 1.2 1.8 4.0 5.5 4.10 5.60 0.2 0.5 0.5 0.40 0.40 1 20 A A V V Max. -55 to 125C Min. 1.7 3.6 4.8 0.3 0.9 1.2 Max. V Unit
VIH
High Level Input Voltage Low Level Input Voltage High Level Output Voltage
VIL
V
VOH
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25C Min. Typ. 30 8 7 18 6 5 Max. 75 15 13 60 12 10 Value -40 to 85C Min. Max. 95 19 16 75 15 13 -55 to 125C Min. Max. 110 22 19 90 18 15 ns Unit
tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time
ns
CAPACITIVE CHARACTERISTICS
Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25C Min. Typ. 5 13 Max. 10 Value -40 to 85C Min. Max. 10 -55 to 125C Min. Max. 10 pF pF Unit
CIN CPD
Input Capacitance Power Dissipation Capacitance (note 1)
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
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M74HCU04
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
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M74HCU04
Plastic DIP-14 MECHANICAL DATA
mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 TYP. MAX. inch
P001A
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M74HCU04
SO-14 MECHANICAL DATA
DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
PO13G
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M74HCU04
TSSOP14 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0 0.45 0.60 0.05 0.8 0.19 0.09 4.9 6.2 4.3 5 6.4 4.4 0.65 BSC 8 0.75 0 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 0.197 0.252 0.173 0.0256 BSC 8 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.201 0.260 0.176 inch
A
A2 A1 b e K c L E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
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M74HCU04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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